A comparison of three techniques for profiling ultra-shallow p+-n junctions
- 1 April 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 74 (1-2) , 156-159
- https://doi.org/10.1016/0168-583x(93)95035-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Shallow junctions for 0.1 μm n-type metal–oxide semiconductor devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Dynamic range of 106 in depth profiling using secondary-ion mass spectrometryApplied Physics Letters, 1980