OBSERVATION OF INDIVIDUAL MISFIT DISLOCATIONS BY HIGH-VOLTAGE ELECTRON MICROSCOPY
- 1 June 1979
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 40 (C6) , C6-213
- https://doi.org/10.1051/jphyscol:1979642
Abstract
Individual misfit dislocations in epitaxial and diffusional interfaces of semiconducting materials are investigated by high-voltage electron microscopy using large-area thinned specimens. The observations show the particular influence of the surface and of the lateral dimensions of the interface on these misfit dislocationsKeywords
This publication has 0 references indexed in Scilit: