TEM INVESTIGATION OF COPPER PRECIPITATION AT GRAIN BOUNDARIES IN SILICON
- 1 January 1990
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 51 (C1) , C1-197
- https://doi.org/10.1051/jphyscol:1990130
Abstract
The precipitation of copper rich particles at different grain boundaries in polycrystalline silicon was investigated in the TEM. They appear after a high temperature anneal with copper scraped on the surface. Tens to hundreds of small particles, up to 60 nm in size, form colonies of extension 1 to 3 µm. The particles nucleate at facets and dislocations in the grain boundaries and have similar features to those found in single crystal materialKeywords
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