Be diffusion at the emitter-base junction of graded AlInAs/GaInAs heterojunction bipolar transistors
- 1 November 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (6) , 2347-2350
- https://doi.org/10.1116/1.586065
Abstract
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