Cathodoluminescence observation of SiO2 layers in a semiconductor device
- 1 April 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (4) , 2304-2305
- https://doi.org/10.1063/1.327868
Abstract
Dispersive cathodoluminescence images from thin films of SiO2 in a Test‐Element‐Group pattern of a conventional Large Scale Integrated circuit device were observed. Band A (290 nm) and band C (560 nm) of the cathodoluminescence were characteristic of a thermally grown SiO2 covered with chemically vapor‐deposited (CVD) SiO2 and may be useful for the study of irradiation induced damages in SiO2. Band B (415 nm) and band D (650 nm) were intense in the surface CVD SiO2 and may provide information on process induced impurities in SiO2 layers. The spatial resolution of a cathodoluminescence image is 2 μm, and it is possible to survey SiO2 layers on a conventional LSI device with this technique.This publication has 0 references indexed in Scilit: