Properties of highly conducting ITO films prepared by ion plating
- 1 September 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 33-34, 919-925
- https://doi.org/10.1016/0169-4332(88)90399-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- Properties of tin doped indium oxide thin films prepared by magnetron sputteringJournal of Applied Physics, 1983
- Electrical properties and defect model of tin-doped indium oxide layersApplied Physics A, 1982
- Characteristics of a thermionically assisted triode ion-plating systemThin Solid Films, 1981
- Electrical and optical properties of In2O3: Sn films prepared by activated reactive evaporationThin Solid Films, 1980
- In2O3 : (Sn) and SnO2 : (F) films - application to solar energy conversion part II — Electrical and optical propertiesMaterials Research Bulletin, 1979