BREAKDOWN VOLTAGES AND CURRENTS IN MECHANICALLY STRESSED Ge AND Si DIODES
- 1 June 1965
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 6 (11) , 225-226
- https://doi.org/10.1063/1.1754145
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Effect of Uniaxial Stress on Germanium p-n JunctionsJapanese Journal of Applied Physics, 1965
- Minority Carrier Lifetime in Uniaxially Stressed GermaniumJapanese Journal of Applied Physics, 1965
- Effect of Mechanical Stress on p-n Junction Device CharacteristicsJournal of Applied Physics, 1964
- Anisotropic Stress Effect on the Excess Current in Tunnel DiodesJournal of Applied Physics, 1964
- Lowering the Breakdown Voltage of Silicon p-n Junctions by StressJournal of Applied Physics, 1964
- Resistance of Elastically Deformed Shallow p-n Junctions. IIJournal of Applied Physics, 1963
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957