A SiGe HBT BiCMOS technology for mixed signal RF applications
- 23 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10889299,p. 195-197
- https://doi.org/10.1109/bipol.1997.647434
Abstract
We present results of IBM's Silicon Germanium HBT 0.35 /spl mu/m L/sub eff/ BiCMOS process with 3 level metal on 200 mm wafers. CMOS devices, as well as resistors, capacitors, inductors and other key passive elements are integrated into a high performance SiGe HBT NPN technology without sacrificing key bipolar characteristics (f/sub t/, f/sub max/). These results demonstrate the potential of designing analog/mixed signal applications with "system-on-a-chip" functionality.Keywords
This publication has 2 references indexed in Scilit:
- SiGe HBT technology: device and application issuesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 200 mm SiGe-HBT BiCMOS technology for mixed signal applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002