Deep Trapping of Carriers in a-Si: H Solar Cells Studied by Transient Photocurrents
- 16 July 1989
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 114 (1) , 413-418
- https://doi.org/10.1002/pssa.2211140144
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Transient photocurrents in a-Si:H diodes: Effects of deep trappingPhysica Status Solidi (a), 1988
- Electrical properties and degradation behavior of hydrogenated amorphous Si alloys for solar cellsApplied Physics A, 1986
- Measurement of deep states in undoped amorphous silicon by current transient spectroscopyJournal of Applied Physics, 1986
- Transient Behavior of Phoioxcurrent in a-Si :H Solar CellsMRS Proceedings, 1986
- Characterization of junctions between transparent electrodes and a-Si:HJournal of Non-Crystalline Solids, 1985