Auger Electron Spectroscopy Determination of the Oxygen/Silicon Ratio in Spin‐On Glass Films

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Abstract
Instrumental parameters for the determination of the oxygen/silicon ratio in SiO 2 films using Auger electron spectroscopy have been studied and optimized. In the case of a binary system such as this, the ratio of the Auger peak heights from the two components is a measure of their relative abundance and can yield meaningful results when compared with a standard. This method has been utilized to determine the oxygen/silicon ratio in spin‐on glass films densified at various temperatures. The oxygen/silicon ratios of nondoped spin‐on glass films show a general trend to increase and approach 2 as densification temperatures increase. The structural re‐arrangement of the silica network at ̃400°C is also reflected by the oxygen/silicon ratios. The oxygen/silicon ratio for other commonly used oxide films produced from steam, oxygen, and CVD was also determined. The techniques and results of this study are discussed.

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