Step-flow growth and fractional-layer superlattices on ()B GaAs vicinal surfaces
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 231-236
- https://doi.org/10.1016/0022-0248(91)90462-e
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wiresJournal of Crystal Growth, 1989
- Step-Flow Growth on Vicinal GaAs Surfaces by Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1989
- AlGaAs epitaxial growth on (111)B substrates by metalorganic vapor-phase epitaxyJournal of Applied Physics, 1989
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substratesJournal of Vacuum Science & Technology B, 1988
- (AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor depositionJournal of Vacuum Science & Technology B, 1988
- Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasersApplied Physics Letters, 1988
- (AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Flow-Rate Modulation Epitaxy of GaAsJapanese Journal of Applied Physics, 1985
- Morphology of organometallic CVD grown GaAs epitaxial layersJournal of Crystal Growth, 1983