Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode

Preprint

7 May 2003

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0305124

Abstract

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

Keywords

RESONANT TUNNELLING DIODE
VOLTAGE CONTROLLED SPIN
RESONANT TUNNELING
TUNNELLING DIODE
SPIN POLARIZED
SPIN SELECTION
TUNNELING
DIODES

All Related Versions

Version 1, 2003-05-07, ArXiv
Published version: Physical Review Letters, 90 (24), 246601.

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