Space-charge controlled conduction in thick metal-insulator-metal barriers
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (7) , 3790-3793
- https://doi.org/10.1063/1.328116
Abstract
Numerical solutions of the (field and diffusion) transport equations yield energy and concentration contours for thick M1‐I‐M2 (metal‐insulator‐metal) barriers, and their appropriate current‐voltage relationships, with and without traps. Traps must ordinarily be expected in such films, and it is shown that they result in a curvature of the barrier profile, which exercises a controlling influence over I‐V characteristics in the forward direction.This publication has 8 references indexed in Scilit:
- Light-activated storage device (LASD)Journal of Applied Physics, 1978
- Accurate solution of an idealized one-carrier metal-semiconductor junction problemSolid-State Electronics, 1962
- Exact Current-Voltage Relation for the Metal-Insulator-Metal Junction with a Simple Model for Trapping of Charge CarriersJournal of Applied Physics, 1957
- Diffusion, Static Charges, and the Conduction of Electricity in Nonmetallic Solids by a Single Charge Carrier. I. Electric Charges in Plastics and Insulating MaterialsJournal of Applied Physics, 1955
- Diffusion, Static Charges, and the Conduction of Electricity in Nonmetallic Solids by a Single Charge Carrier. II. Solution of the Rectifier Equations for Insulating LayersJournal of Applied Physics, 1955
- Experimental Verification of the Relationship between Diffusion Constant and Mobility of Electrons and HolesPhysical Review B, 1952
- Theory of Rectification of an Insulating LayerPhysical Review B, 1948
- The theory of crystal rectifiersProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1939