Growth peculiarities of gallium arsenide single crystals
- 1 November 1963
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 6 (6) , 597-604
- https://doi.org/10.1016/0038-1101(63)90055-8
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Indium antimonide—A review of its preparation, properties and device applicationsSolid-State Electronics, 1962
- Preparation of Solid Solutions of GaP and GaAs by a Gas Phase ReactionJournal of the Electrochemical Society, 1962
- On the Crystallinity of GaAs Grown Horizontally in Quartz BoatsJournal of the Electrochemical Society, 1962
- Growth of Gallium Arsenide by Horizontal Zone MeltingJournal of Applied Physics, 1960
- Growth of InSb Crystals in the Polar DirectionJournal of Applied Physics, 1960
- Überblick über einige physikalisch-chemische Eigenschaften der AIIIBv-Verbindungen unter besonderer Berücksichtigung der ZustandsdiagrammePublished by Springer Nature ,1960
- On the Growth of Gallium Arsenide Crystals from the MeltJournal of Applied Physics, 1959
- Production of Dislocations During Growth from the MeltJournal of Applied Physics, 1958
- Notizen: Herstellung von InAs- und GaAs-EinkristallenZeitschrift für Naturforschung A, 1956
- Herstellung und elektrische Eigenschaften von InP und GaAsZeitschrift für Naturforschung A, 1955