AsGa antisite defects in GaAs
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 398-403
- https://doi.org/10.1016/0378-4363(83)90280-2
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Chemisorption-Induced Defects on GaAs(110) SurfacesPhysical Review Letters, 1982
- Role of surface antisite defects in the formation of Schottky barriersPhysical Review B, 1982
- Schottky barriers: An effective work function modelApplied Physics Letters, 1981
- Correlation of GaAs surface chemistry and interface Fermi-level position: A single defect model interpretationJournal of Vacuum Science and Technology, 1981
- Photo‐EPR of deformation‐produced defects in GaAsCrystal Research and Technology, 1981
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Application of the semiclassical method to polarizationJournal de Physique, 1979
- Ionization effects in damage production in semiconductorsRadiation Effects, 1976
- Microscopic Mechanisms of Growth of Dark Line Defects in Double Heterostructure LasersJournal of the Electrochemical Society, 1975
- Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type SemiconductorsJournal of the Electrochemical Society, 1975