General Semiconductor Junction Relations†
- 1 May 1957
- journal article
- Published by Taylor & Francis in Journal of Electronics and Control
- Vol. 2 (6) , 609-610
- https://doi.org/10.1080/00207215708937064
Abstract
General carrier density relations are derived for the case of an abrupt junction between two sections of semiconductor with arbitrary impurity contents and with an arbitrary applied bias. These relations reduce to those of Shockley at very low bias Levels, but in addition take account of all types of conductivity modulation effects.Keywords
This publication has 1 reference indexed in Scilit:
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949