High-performance SOI-CMOS Transistors in oxygen-implanted silicon without epitaxy

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Abstract
CMOS transistors with channel mobilities within a few percent of the equivalent bulk values have been produced in silicon-on-insulator (SOI) substrates formed by oxygen implantation. By performing the implantation at high energy (200 keV) and annealing the wafers at 1300°C, the thickness and quality of the resulting silicon film is such that the expensive and difficult to control step of epitaxial growth is not needed. The transistors have very low junction leakage. The lack of anomalous lateral diffusion of the source-drain dopants allows 1-µm gates to be used without excessive channel shortening.