Determination of the spatial variation of the carrier lifetime in a proton-irradiated Si n/sup +/-n-p/sup +/ diode by optical-beam-induced current measurements
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (9) , 2076-2079
- https://doi.org/10.1109/16.57171
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Determination of minority-carrier lifetime and surface recombination velocity by optical-beam-induced-current measurements at different light wavelengthsJournal of Applied Physics, 1989
- The Displacement of Atoms in Solids by RadiationReports on Progress in Physics, 1955