Low-frequency impurity conduction in lightly doped n-type GaAs
- 5 February 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (3) , 491-496
- https://doi.org/10.1088/0022-3719/9/3/016
Abstract
The real part of the AC conductivity has been measured in epitaxial layers of n-type GaAs in the frequency range 1-103 Hz at 4.2K, where the DC conductivity is dominated by phonon-assisted hopping between impurities. These measurements cover the transition region from DC behaviour to an omega S dependence, where s approximately 0.6, and are compared with a recent theory of the frequency-dependent impurity conduction by Scher and Lax (1973) based on a stochastic interpretation of transport in a disordered solid. The theory predicts a DC limit of the conductivity which is about four orders of magnitude lower than the experimental values.Keywords
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