Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6) , 1936-1942
- https://doi.org/10.1116/1.589581
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Study of integration issues in shallow trench isolation for deep submicron CMOS technologiesPublished by SPIE-Intl Soc Optical Eng ,1996
- Etching SiO2 Films in Aqueous 0.49% HFJournal of the Electrochemical Society, 1996