Precise control of two dimensional growth of InAs on GaAs (111)A surfaces studied by scanning tunneling microscopy
- 1 March 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 112, 138-141
- https://doi.org/10.1016/s0169-4332(96)01021-5
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Time-resolved optical characterization of InGaAs/GaAs quantum dotsApplied Physics Letters, 1994
- Strain relief at hexagonal-close-packed interfacesPhysical Review B, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994
- Virtual-surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wellsApplied Physics Letters, 1993
- Lattice mismatch dislocations in a preferentially sputtered alloy studied by scanning tunneling microscopyPhysical Review Letters, 1992
- Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layersPhysical Review Letters, 1992
- Scanning tunneling microscopy of surfactant-mediated epitaxy of Ge on Si(111): strain relief mechanisms and growth kineticsSurface Science, 1992
- Interfacial dislocations detected by scanning tunneling microscopyUltramicroscopy, 1992
- Modulated molecular beam epitaxy: a successful route toward high quality highly strained heterostructuresJournal of Crystal Growth, 1991