Redistribution of chromium in semi-insulating GaAs:Cr during laser annealing

3 July 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (14) , 554-556
https://doi.org/10.1049/el:19800385

Abstract

Secondary ion mass spectrometry (s.i.m.s.) measurements on laser irradiated Cr-doped (semi-insulating) GaAs samples revealed a Cr redistribution effect near the surface region. The maximum depth at which redistribution is measured is shown to increase with increasing energy density from a Q-switched ruby laser, reaching a depth of ~1.4 μm for an energy density of 1.4 J/cm². The redistribution is explained in terms of a zone refining process which occurs during the cooling cycle of the laser induced melted region.

Keywords

GAAS:CR
SECONDARY ION MASS SPECTROMETRY MEASUREMENTS
ENERGY DENSITY
LASER INDUCED MELTED REGION
SURFACE REGION
CR DOPED
COOLING CYCLE
Q-SWITCHED RUBY LASER
CR REDISTRIBUTION EFFECT
ZONE REFINING PROCESS
LASER ANNEALING

This publication has 0 references indexed in Scilit: