Radiation effects in TaSix/polysilicon MOS gate structures

• 1 October 1984
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B
• Vol. 2  (4) , 723-729
• https://doi.org/10.1116/1.582869

Abstract

Keywords

• TUNGSTEN
• THRESHOLD VOLTAGE
• GAMMA RADIATION
• SCIENCE AND TECHNOLOGY
• LAYERS
• ELECTRONS
• SEMICONDUCTOR DEVICES
• CRYSTALLIZATION
• RADIATION HARDNESS
• FERMIONS
• ELECTRICAL EQUIPMENT
• RADIATION HARDENING
• ELEMENTARY PARTICLES
• METALS
• LEPTONS
• SPUTTERING
• BEAMS
• TRANSISTORS
• CAPACITORS
• IONIZING RADIATION