cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K
- 14 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (2) , 55-57
- https://doi.org/10.1063/1.97350
Abstract
Continuous operation of 2.1 μm wavelength Ga0.84In0.16As0.15Sb0.85 /Al0.27Ga0.73As0.04Sb0.96 double heterostructure injection lasers has been achieved up to a temperature of 190 K for the first time. The laser wafers were grown by liquid phase epitaxy. In pulsed operation, broad area devices with active layer thicknesses of 0.8–1.0 μm exhibited room‐temperature threshold current densities as low as 7 kA/cm2.Keywords
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