Quantum confined Stark effect in semiconductor quantum wells including valence band mixing and Coulomb effects
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (11) , 2741-2755
- https://doi.org/10.1109/3.248932
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
- Solving the Schrodinger equation in arbitrary quantum-well potential profiles using the transfer matrix methodIEEE Journal of Quantum Electronics, 1990
- Alternative expression of the dispersion equation in multilayered structuresIEE Proceedings J Optoelectronics, 1990
- Theory of refractive index variation in quantum well structure and related intersectional optical switchJournal of Lightwave Technology, 1988
- Optical gain in a strained-layer quantum-well laserIEEE Journal of Quantum Electronics, 1988
- A novel numerical technique for solving the one-dimensional Schroedinger equation using matrix approach-application to quantum well structuresIEEE Journal of Quantum Electronics, 1988
- Theoretical studies of optical modulation in lattice matched and strained quantum wells due to transverse electric fieldsIEEE Journal of Quantum Electronics, 1987
- Newk⋅ptheory for GaAs/As-type quantum wellsPhysical Review B, 1987
- Variational calculation of polarization of quantum-well photoluminescencePhysical Review B, 1987
- Electronic states in semiconductor heterostructuresIEEE Journal of Quantum Electronics, 1986
- Effective masses of holes at GaAs-AlGaAs heterojunctionsPhysical Review B, 1985