Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering
- 28 June 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (26) , 3408-3410
- https://doi.org/10.1063/1.109032
Abstract
The microstructure of semiconductor laser diodes is studied using a combination of focused ion beam sputtering, electroluminescence imaging, and cross-sectional transmission electron microscopy. Careful control of focused ion beam sputtering allows fabrication of high quality thin membranes for transmission electron microscope imaging, which can be located to submicron accuracy at a given position on the laser active stripe. By correlation with electroluminescence imaging, the membrane may then be positioned at an optically degraded region of the active stripe. In addition, imaging of the complete cross-sectional laser structure, from substrate to surface contact layers is possible. The applications of these techniques to studies of laser degradation mechanisms are demonstrated and discussed.Keywords
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