High-power (106 mW) CW operation of transverse-mode stabilised InGaAlP laser diodes with strained In 0.62 Ga 0.38 P active layer

Publisher Website
Google Scholar
Abstract
High-power CW operation of transverse-mode stabilised InGaAlP laser diodes has been achieved by using a selectively-buried-ridge waveguide structure with a very thin (150Å) active layer. A strained In0.622Ga0.38P active layer was adopted to obtain a sufficient bandgap difference between the active and cladding layers. A maximum light output of 106 mW was obtained from the laser with anti-reflection and high-reflection coatings.