Detuned loading in coupled cavity semiconductor lasers—effect on quantum noise and dynamics

1 September 1984

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 45 (5) , 501-503
https://doi.org/10.1063/1.95316

Abstract

We derive the modulation and noise properties of a semiconductor laser consisting of an active cavity loaded by a passive cavity. The results indicate that under certain conditions the direct modulation bandwidth can be doubled with simultaneous phase noise reduction as compared to a conventional laser.

Keywords

This publication has 10 references indexed in Scilit:

Phase noise characteristics of single mode semiconductor lasers with optical feedback
Applied Physics Letters, 1984
Spectral linewidth reduction in semiconductor lasers by an external cavity with weak optical feedback
Electronics Letters, 1983
Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies
Applied Physics Letters, 1983
Semiclassical theory of noise in semiconductor lasers - Part I
IEEE Journal of Quantum Electronics, 1983
Semiclassical theory of noise in semiconductor lasers - Part II
IEEE Journal of Quantum Electronics, 1983
On the linewidth enhancement factor α in semiconductor injection lasers
Applied Physics Letters, 1983
High-speed direct single-frequency modulation with large tuning rate and frequency excursion in cleaved-coupled-cavity semiconductor lasers
Applied Physics Letters, 1983
Measurement of the linewidth enhancement factor α of semiconductor lasers
Applied Physics Letters, 1983
Theory of the linewidth of semiconductor lasers
IEEE Journal of Quantum Electronics, 1982
Fundamental line broadening of single-mode (GaAl)As diode lasers
Applied Physics Letters, 1981