Interdiffusion at Ge/Si Interfaces Studied with AES Depth Profiling

This publication has 5 references indexed in Scilit:

• Quantitative AES depth profiling of a Ge/Si multilayer structure
  Surface and Interface Analysis, 2002
• Strain-induced diffusion in a strained Si1−xGex/Si heterostructure
  Applied Physics Letters, 2000
• Ultimate depth resolution and profile reconstruction in sputter profiling with AES and SIMS
  Surface and Interface Analysis, 2000
• Direct Observation of Intermixing at Ge/Si(001) Interfaces by High-Resolution Rutherford Backscattering Spectroscopy
  Physical Review Letters, 1999
• Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
  Applied Physics Letters, 1999