Using constant base current as a boundary condition for one-dimensional AlGaAs/GaAs heterojunction bipolar transistor simulation
- 30 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (18) , 1501-1503
- https://doi.org/10.1049/el:19900964
Abstract
Using constant base current as a boundary condition, a one-dimensional numerical simulation technique based on the conventional transport equations was developed. Transistor current-voltage curves with base current density as the variable parameter, similar to the experimental data taken from a curve tracer, are obtained. The simulation also produces transistor characteristics, especially base modulation effects, that cannot be obtained easily by using constant base voltage as a boundary condition.Keywords
This publication has 1 reference indexed in Scilit:
- Analysis and Simulation of Semiconductor DevicesPublished by Springer Nature ,1984