Induced absorption spectroscopic determination of exciton binding energies in type-II GaAs/AlAs superlattices
- 15 June 1990
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (17) , 12319-12322
- https://doi.org/10.1103/physrevb.41.12319
Abstract
The binding energies of magnetoexcitons in a range of GaAs/AlAs type-II superlattices have been measured directly for the first time, using a novel induced far-infrared absorption technique. Zero-field binding energies in the range 13.2–17.4 meV are found, and these are in excellent agreement with recently published variational calculations. Good fits to the experimental data in the range B=0–8 T are obtained with a modified quasi-two-dimensional magnetoexciton theory, allowing exciton dimensionality parameters to be determined.Keywords
This publication has 22 references indexed in Scilit:
- Phonon coupling andmixing in GaAs-AlAs short-period superlatticesPhysical Review B, 1989
- Photoluminescence decay time studies of type II GaAs/AlAs quantum-well structuresJournal of Applied Physics, 1989
- Detailed ground- and excited-state spectroscopy of indirect free excitonsPhysical Review Letters, 1988
- Effects of electronic coupling on the band alignment of thin GaAs/AlAs quantum-well structuresPhysical Review B, 1988
- Localized indirect excitons in a short-period GaAs/AlAs superlatticePhysical Review B, 1987
- Effects of the layer thickness on the electronic character in GaAs-AlAs superlatticesApplied Physics Letters, 1987
- X-point excitons in AlAs/GaAs superlatticesApplied Physics Letters, 1986
- An infrared study of the shallow acceptor states in GaAsJournal of Physics C: Solid State Physics, 1978
- Direct and Indirect Optical Energy Gaps of AlAsJournal of Applied Physics, 1971
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962