Infrared Absorption by Excitons and Their Associates in Silicon
- 1 August 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 46 (2) , 495-500
- https://doi.org/10.1002/pssb.2220460205
Abstract
The absorption of light, Λ = 1.4 μm, has been investigated in undoped silicon at T < 30 °K under powerful laser light with hω = 1.21 eV. Under these conditions the absorption modulation pulse shows two distinct decay times with τc 0.4 μs and τex. ≈ 5 to 7 μs, the proportion of either of the two components being strongly dependent on temperature and excitation intensity. The results are discussed in terms of the formation of a condensed exciton phase having a short lifetime of τc 0.4 μs. In specimens immersed in liquid He absorption oscillations induced by laser light have been observed.Keywords
This publication has 2 references indexed in Scilit:
- Recombination Kinetics of Excitonic Molecules and Free Excitons in Intrinsic SiliconPhysical Review B, 1970
- Fine Structure in the Absorption-Edge Spectrum of GePhysical Review B, 1957