Geometrical structure of an iron epilayer on Si (111) : an X-ray standing wave analysis
Open Access
- 1 June 1992
- journal article
- Published by EDP Sciences in Journal de Physique I
- Vol. 2 (6) , 1215-1232
- https://doi.org/10.1051/jp1:1992205
Abstract
Dépôt d'une copie effectué avec l'aimable autorisation de EDP SciencesThe structure of an iron film, deposited at low temperature (50 °C) upon a silicon (111) substrate, has been determined by means of X-ray Standing Wave experiments performed at LURE (Orsay, France). Experimental results are coherent with the model of an abrupt interface between the adsorbate and the surface : the first site of adsorption terminates the bulk silicon and a body-centred iron layer epitaxially grows on the substrate with a preferential growth orientationKeywords
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