Reliability of Gate Metallization in Power GaAs MESFETs

1 April 1984

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 59-62
https://doi.org/10.1109/irps.1984.362020

Abstract

Failure modes have been studied on 0.5 μm gate power GaAs MESFETs with Al, Ti/Al and Ti/Al/Ti gate metallization, respectively. It has been found that the dominant failure modes are gate metal disconnection for Al gate, catastrophic burn out for the Ti/Al gate and gate breakdown voltage degradation for the Ti/Al/Ti gate under D.C. operational life tests. The degradation mechanisms have been clarified using SEM, microprobe-AES and SIMS. It is shown that Ti/Al, gate is the most reliable among these three kinds of FETS.

Keywords

METALLIZATION
GALLIUM ARSENIDE
MESFETS
LIFE TESTING
DEGRADATION
ELECTRODES
TEMPERATURE
FETS
POSITRON EMISSION TOMOGRAPHY
TELECOMMUNICATIONS

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