Light emission from an ambipolar semiconducting polymer field-effect transistor
- 9 February 2006
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 6117, 61170R-61170R-8
- https://doi.org/10.1117/12.644204
Abstract
Ambipolar light-emitting field-effect transistors are fabricated with two different metals for the top-contact source and drain electrodes; a low-work-function metal defining the channel for the source electrode and a high-work-function metal defining the channel for the drain electrode. A thin film of polypropylene-co-1-butene on SiNx is used as the gate dielectric on an n++-Si wafer, which functioned as the substrate and the gate electrode. Transport data show ambipolar behavior. Recombination of electrons and holes results in a narrow zone of light emission within the channel. The location of the emission zone is controlled by the gate bias.This publication has 0 references indexed in Scilit: