Fractional quantum Hall effect in a high-mobility GaAs/AlxGa1−xAs multiple quantum well heterostructure
- 2 January 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1) , 27-29
- https://doi.org/10.1063/1.100820
Abstract
We report the realization of a high mobility [μ≂4.8×105 cm2/(V s)] selectively doped GaAs/AlxGa1−xAs multiple quantum well structure with low density (ns ≂1.7×1011 cm−2 for each of the 85 wells) grown by molecular beam epitaxy. The activation energy for the fractional quantum Hall state at the Landau‐level filling factor ν=1/3 is Δ≂2 K, the highest value ever reported for any multiple quantum well structure. Such a structure is nearly ideal for studies of the thermal properties of the two‐dimensional electron system in the fractional quantum Hall regime.Keywords
This publication has 15 references indexed in Scilit:
- Magneto-optics of the fractional quantum hall effectSurface Science, 1988
- Heat capacity of the two-dimensional electron gas in GaAs/As multiple-quantum-well structuresPhysical Review B, 1988
- Quantum oscillations in the thermal conductance of GaAs/AlGaAs heterostructuresPhysical Review Letters, 1987
- Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300KSolid State Communications, 1987
- Superlattice magnetoroton bandsPhysical Review Letters, 1987
- The fractional quantum hall effectIEEE Journal of Quantum Electronics, 1986
- Raman Scattering by Coupled-Layer Plasmons and In-Plane Two-Dimensional Single-Particle Excitations in Multi-Quantum-Well StructuresPhysical Review Letters, 1986
- Magnetic Field Dependence of Activation Energies in the Fractional Quantum Hall EffectPhysical Review Letters, 1985
- Density of States and de Haas—van Alphen Effect in Two-Dimensional Electron SystemsPhysical Review Letters, 1985
- Specific Heat of Two-Dimensional Electrons in GaAs-GaAlAs MultilayersPhysical Review Letters, 1985