Abstract
Recent results concerning surface and interface properties of Cu-chalcopyrite semiconductors are discussed. The aim of the paper is to improve the understanding of Cu-chalcopyrite systems. We treat surface structures and surface states. Experimental surface data of thin films and crystals are interpreted in terms of Fermi-level pinning. We estimate the energetic position of surface states based on a tight binding model. Surface defect structures are discussed and a model for their impact on growth properties is proposed. Estimations of charge neutrality levels are given. Experimental heterojunction band offsets are compared with model predictions. For several systems we find clear correspondence between modeled and measured band offsets. Attempts are made to explain differences which occur for specific heterocontacts.

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