High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800–850 nm wavelength operation
- 25 May 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (21) , 2727-2729
- https://doi.org/10.1063/1.121073
Abstract
High-speed resonant cavity enhanced Schottky photodiodes operating in 800–850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs material system. The Schottky contact is a semitransparent Au film which also serves as the top reflector of the Fabry–Perot cavity. The detectors exhibit a peak quantum efficiency of η=0.5 at λ=827 nm wavelength and a 3 dB bandwidth of more than 50 GHz resulting in a bandwidth-efficiency product of more than 25 GHz.Keywords
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