Characterization of boron carbide thin films fabricated by plasma enhanced chemical vapor deposition from boranes
- 15 November 1992
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 72 (10) , 4925-4933
- https://doi.org/10.1063/1.352060
Abstract
No abstract availableThis publication has 68 references indexed in Scilit:
- Evidence for the adsorption of oriented nido-R2C2B4H6 carborane cluster molecules on silicon(111) surfacesJournal of the American Chemical Society, 1991
- Synthesis of B-doped diamond filmJournal of Crystal Growth, 1990
- Calculation of electronic and structural properties ofPhysical Review B, 1988
- Kinetics and mechanism of the thermolysis and photolysis of binary boranesPublished by Walter de Gruyter GmbH ,1987
- Optical absorption of SiH0.16 films near the optical GAPJournal of Non-Crystalline Solids, 1980
- The conduction mechanism of β rhombohedral boronJournal of the Less Common Metals, 1979
- Photoemission and electron backscattering from monocrystalline boronJournal of the Less Common Metals, 1976
- Composition and structure of boron carbides prepared by CVDJournal of Crystal Growth, 1974
- Gasphasenabscheidung von binären Bor-Kohlenstoff-Phasen bei Substrattemperaturen von 900 bis 1800 °C II. Rhomboedrisches BorcarbidJournal of the Less Common Metals, 1974
- Gasphasenabscheidung von binären Bor-Kohlenstoff-Phasen bei Substrattemperaturen von 900 bis 1800 °C I. Tetragonales und orthorhombisches BorcarbidJournal of the Less Common Metals, 1974