MBE Grown GaAs MESFETs with ultra-high gmand fT

• 1 January 1986
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 829-831
• https://doi.org/10.1109/iedm.1986.191327

Abstract

Keywords

• GALLIUM ARSENIDE
• MESFETS
• BUFFER LAYERS
• EPITAXIAL LAYERS
• MOLECULAR BEAM EPITAXIAL GROWTH
• TRANSCONDUCTANCE
• LABORATORIES
• FABRICATION
• TESTING
• DOPING