Geometric and electronic properties of Cs structures on III-V (110) surfaces: From 1D and 2D insulators to 3D metals
- 11 March 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 66 (10) , 1338-1341
- https://doi.org/10.1103/physrevlett.66.1338
Abstract
We report the structural and electronic properties of Cs adsorbed on room-temperature GaAs and InSb (110) surfaces as observed with scanning tunneling microscopy. Cs initially forms long one-dimensional (1D) zigzag chains on both surfaces. Additional Cs adsorption on GaAs(110) results in the formation of a 2D overlayer consisting of five-atom Cs polygons arranged in c(4×4) superlattice. The tunneling gap measured over these insulating structures narrows with the transition from 1D to 2D, with metallic characteristics observed following saturation with a second Cs overlayer.Keywords
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