Oscillatory As4 surface reaction rates during molecular beam epitaxy of AlAs, GaAs and InAs
- 1 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 125-130
- https://doi.org/10.1016/0022-0248(91)90959-9
Abstract
No abstract availableKeywords
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