Characterisation of metal mirrors on GaAs
- 15 February 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (4) , 319-320
- https://doi.org/10.1049/el:19960230
Abstract
The authors describe a Fabry-Perot technique for determining the reflectivity and the phase of the interface between a semiconductor and a multilayer metal structure as it will be realised in actual device fabrication. The reflection coefficients of GaAs to Ti/Au, Pd/Au, Au and Ag interfaces are measured at 1.55 µm.Keywords
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