A CMOS 1Mb EPROM
- 23 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 1Mb CMOS EPROM with 150ns access time power dissipation of 250mW and cell size of 20.25μm2will be described. The die measures 79K mil2.Keywords
This publication has 1 reference indexed in Scilit:
- A high performance CMOS process for the next generation EPROMPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984