Characterisation of multiple-scan electron beam annealing method

10 April 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (8) , 295-297
https://doi.org/10.1049/el:19800215

Abstract

Beam power per unit area and exposure time are the predominant factors in defining implant anneal conditions for the multiple scan electron beam annealing technique. A theoretical analysis is presented which agrees with experimental results. Carrier concentration profiles confirm that the implant becomes electrically active without diffusion.

Keywords

BEAM POWER PER UNIT AREA
MULTIPLE SCAN ELECTRON BEAM ANNEAL TECHNIQUE
IMPLANT ANNEAL CONDITIONS
EXPOSURE TIME
ION IMPLANTED SEMICONDUCTOR ANNEALING
EXPERIMENTAL RESULTS
THEORETICAL ANALYSIS

This publication has 0 references indexed in Scilit: