The Urbach tail in amorphous semiconductors
- 14 May 1977
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 10 (9) , L263-L266
- https://doi.org/10.1088/0022-3719/10/9/008
Abstract
The exponential absorption edge in amorphous semiconductors is discussed in relation to the Mott-Street model (Phys. Rev. Lett., vol.35, p.1293 (1975)) for chalcogenide glasses. It is shown that the absorption of a photon leads to neutralization of a donor-acceptor pair. The concentration of such pairs is exponentially dependent on the creation energy. The temperature, frequency and pressure dependence of the absorption and electroabsorption in amorphous materials are discussed.Keywords
This publication has 11 references indexed in Scilit:
- Optical properties of amorphous arsenicPhilosophical Magazine, 1976
- States in the Gap in Glassy SemiconductorsPhysical Review Letters, 1975
- Model for the Electronic Structure of Amorphous SemiconductorsPhysical Review Letters, 1975
- Photoluminescence in single-crystal chalcogenides in the system As2Se3-xSxJournal of Physics C: Solid State Physics, 1974
- Toward a Unified Theory of Urbach's Rule and Exponential Absorption EdgesPhysical Review B, 1972
- Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductorsPhilosophical Magazine, 1970
- Pair Spectra Involving the Shallow Acceptor Mg in GaPJournal of Applied Physics, 1970
- Electroabsorption in Semiconductors: The Excitonic Absorption EdgePhysical Review B, 1970
- The absorption edge of amorphous As2S3Czechoslovak Journal of Physics, 1970
- Chemical Interactions Among Defects in Germanium and SiliconBell System Technical Journal, 1956