Atomic displacement processes in irradiated amorphous and crystalline silicon
- 9 June 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (23) , 3101-3103
- https://doi.org/10.1063/1.119104
Abstract
Ion beam mixing was investigated in crystalline and amorphous Si using molecular dynamics simulations. The magnitude of mixing was found to be larger in amorphous Si by a factor of about 2. The difference is attributed to local relaxation mechanisms occurring during the cooling down phase of the cascade. Comparison of mixing between Si and Al shows that short range structural order also has a significant influence on mixing.Keywords
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