Effect of the image potential on excitons in semi-infinite semiconductors
- 15 October 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 52 (16) , 11891-11897
- https://doi.org/10.1103/physrevb.52.11891
Abstract
The effect of the image potential on Wannier-exciton wave functions is studied perturbatively within the effective-mass approximation. We show that the image potential increases the dead- and transition-layer depths by about 10%. These differences lead to small changes in the optical spectra.Keywords
This publication has 16 references indexed in Scilit:
- Exciton-free-layer depth as a function of the electron-hole mass ratioPhysical Review B, 1993
- Effect of an image potential on the ground-state energy of shallow-donor impurities near the surface of semi-infinite crystalsPhysical Review B, 1993
- Image charges in semiconductor quantum wells: Effect on exciton binding energyPhysical Review B, 1990
- Exciton wave functions in semi-infinite semiconductors: A check of the adiabatic approximationPhysical Review B, 1985
- Eigenstates of Wannier excitons near a semiconductor surfacePhysical Review B, 1983
- Wannier-Mott excitons in semi-infinite crystals: Wave functions and normal-incidence reflectivityPhysical Review B, 1982
- Coupling between photons and exciton polaritons across surfaces of direct-gap semiconductorsPhysical Review B, 1981
- The Excitonic Surface Potential in SemiconductorsPhysica Status Solidi (b), 1978
- The Surface Effect on the Reflectivity Spectrum Originating from a Large Radius ExcitonJournal of the Physics Society Japan, 1976
- Theoretical and Experimental Effects of Spatial Dispersion on the Optical Properties of CrystalsPhysical Review B, 1963