Profile Design Issues and Optimization of Epitaxial Si and SiGe-Base Bipolar Transistors and Circuits for 77K Applications

This publication has 5 references indexed in Scilit:

• Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• Velocity saturation in the collector of Si/Ge/sub x/Si/sub 1-x//Si HBT's
  IEEE Electron Device Letters, 1990
• The implementation of a reduced-field profile design for high-performance bipolar transistors
  IEEE Electron Device Letters, 1990
• Scaling the silicon bipolar transistor for sub-100-ps ECL circuit operation at liquid nitrogen temperature
  IEEE Transactions on Electron Devices, 1990
• Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition
  Applied Physics Letters, 1986