Addendum to Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}{\times}\sqrt{3}\)-Sn \(\sqrt{3}{\times}\sqrt{3}\)-In and \(2\sqrt{3} {\times} 2\sqrt{3}\)-Sn Surfaces
- 1 December 1988
- journal article
- addenda
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 57 (12) , 4452
- https://doi.org/10.1143/jpsj.57.4452
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Empty- and Filled-Electronic States of the Si(111)\(\sqrt{3}\times \sqrt{3}\)-Sn, \(\sqrt{3}\times \sqrt{3}\)-In and \(2\sqrt{3}\times 2\sqrt{3}\)-Sn SurfacesJournal of the Physics Society Japan, 1987
- Unoccupied surface states revealing the Si(111)√3 √3-Al, -Ga, and -In adatom geometriesPhysical Review B, 1987
- Origin of surface states on Si(111)(7×7)Physical Review Letters, 1986